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2SB1188T100Q

2SB1188T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2SB1188T100Q
  • Package: TO-243AA
  • Datasheet: PDF
  • Stock: 718
  • Description: 2SB1188T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1188
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 2W
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 800mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Collector Emitter Breakdown Voltage -32V
Voltage - Collector Emitter Breakdown (Max) 32V
Transition Frequency 100MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) -40V
Emitter Base Voltage (VEBO) -5V
hFE Min 82
VCEsat-Max 0.8 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet