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2SB1427T100E

2SB1427T100E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2SB1427T100E
  • Package: TO-243AA
  • Datasheet: -
  • Stock: 770
  • Description: 2SB1427T100E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 390 @ 500mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 20V
Max Frequency 100MHz
Transition Frequency 90MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) -20V
Emitter Base Voltage (VEBO) -6V
hFE Min 390
Continuous Collector Current -2A
VCEsat-Max 0.5 V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number 2SB1427
See Relate Datesheet