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2SB906-Y(TE16L1,NQ

2SB906-Y(TE16L1,NQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi


  • Manufacturer: Toshiba Semiconductor and Storage
  • Origchip NO: 830-2SB906-Y(TE16L1,NQ
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 888
  • Description: 2SB906-Y(TE16L1,NQ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1W
Frequency 9MHz
Number of Elements 1
Power Dissipation 1W
Transistor Type PNP
Collector Emitter Voltage (VCEO) -60V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 300mA, 3A
Collector Emitter Breakdown Voltage 60V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
RoHS Status RoHS Compliant
See Relate Datesheet