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2SC3585-T1B-A

RF Bipolar Transistors NPN High Frequency


  • Manufacturer: CEL
  • Origchip NO: 130-2SC3585-T1B-A
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 679
  • Description: RF Bipolar Transistors NPN High Frequency (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 200mW
Power - Max 200mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 10V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 6V
Collector Emitter Breakdown Voltage 10V
Gain 9dB
Max Breakdown Voltage 10V
Frequency - Transition 10GHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 1.5V
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
See Relate Datesheet