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2SK1058-E

MOSFET N-CH 160V 7A TO-3P


  • Manufacturer: Renesas Electronics America
  • Origchip NO: 668-2SK1058-E
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 473
  • Description: MOSFET N-CH 160V 7A TO-3P (Kg)

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Details

Tags

Parameters
Drain Current-Max (Abs) (ID) 7A
Voltage - Rated DC 160V
Drain to Source Breakdown Voltage 160V
Technology MOSFET (Metal Oxide)
Height 22.1mm
Terminal Position SINGLE
Radiation Hardening No
RoHS Status ROHS3 Compliant
Current Rating 7A
Lead Free Lead Free
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 100W Tc
Factory Lead Time 16 Weeks
Contact Plating Copper, Tin
Operating Mode ENHANCEMENT MODE
Mount Through Hole
Mounting Type Through Hole
Power Dissipation 100W
Package / Case TO-3P-3, SC-65-3
Case Connection SOURCE
Number of Pins 3
Turn On Delay Time 180 ns
Transistor Element Material SILICON
Manufacturer Package Identifier PRSS0004ZE-A
FET Type N-Channel
Operating Temperature 150°C TJ
Transistor Application SWITCHING
Packaging Tube
Published 2005
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Pbfree Code yes
Current - Continuous Drain (Id) @ 25°C 7A Ta
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Vgs (Max) ±15V
Number of Terminations 3
Turn-Off Delay Time 60 ns
ECCN Code EAR99
Continuous Drain Current (ID) 7A
Subcategory FET General Purpose Power
Gate to Source Voltage (Vgs) 15V
See Relate Datesheet