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2SK2503TL

MOSFET N-CH 60V 5A DPAK


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-2SK2503TL
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 626
  • Description: MOSFET N-CH 60V 5A DPAK (Kg)

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Details

Tags

Parameters
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e2
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 135mOhm
Terminal Finish TIN COPPER
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 20A
Dual Supply Voltage 60V
Nominal Vgs 2.5 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet