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AO3415

MOSFET P-CH 20V 4A SOT23


  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Origchip NO: 62-AO3415
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: -
  • Stock: 599
  • Description: MOSFET P-CH 20V 4A SOT23 (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 19 ps
Continuous Drain Current (ID) -30A
Threshold Voltage 8mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.054Ohm
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Drain to Source Breakdown Voltage -20V
Number of Pins 3
Max Junction Temperature (Tj) 150°C
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Feedback Cap-Max (Crss) 110 pF
Packaging Tape & Reel (TR)
Published 2011
Height 1.25mm
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 13 ps
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 4A, 4.5V
See Relate Datesheet