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  • AOD1N60

AOD1N60

MOSFET N-CH 600V 1.3A TO252


  • Manufacturer: Alpha & Omega Semiconductor Inc.
  • Origchip NO: 62-AOD1N60
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: -
  • Stock: 940
  • Description: MOSFET N-CH 600V 1.3A TO252 (Kg)

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Details

Tags

Parameters
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Height 2.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -50°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Power Dissipation 45W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9 Ω @ 650mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
See Relate Datesheet