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APL502LG

MOSFET N-CH 500V 58A TO-264


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APL502LG
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 934
  • Description: MOSFET N-CH 500V 58A TO-264 (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.6g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 90mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 58A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 730W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 730W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 29A, 12V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 232A
Avalanche Energy Rating (Eas) 3000 mJ
Height 5.21mm
Length 26.49mm
Width 20.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet