All Products

APT100MC120JCU2

1200 V 17 mOhm 600 w Boost chopper SiC MOSFET ISOTOP


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT100MC120JCU2
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 884
  • Description: 1200 V 17 mOhm 600 w Boost chopper SiC MOSFET ISOTOP (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology SiCFET (Silicon Carbide)
Number of Elements 1
Power Dissipation-Max 600W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 17m Ω @ 100A, 20V
Vgs(th) (Max) @ Id 2.3V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds 5960pF @ 1000V
Current - Continuous Drain (Id) @ 25°C 143A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
Continuous Drain Current (ID) 143A
Drain Current-Max (Abs) (ID) 25A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet