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APT11GF120KRG

IGBT 1200V 25A 156W TO220


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT11GF120KRG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 506
  • Description: IGBT 1200V 25A 156W TO220 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 156W
Current Rating 25A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 25A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 12 ns
Test Condition 800V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 8A
Turn Off Time-Nom (toff) 161 ns
IGBT Type NPT
Gate Charge 65nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 7ns/100ns
Switching Energy 300μJ (on), 285μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet