All Products

APT11GP60BDQBG

POWER MOS 7 IGBT A NEW GENERATION OF HIGH VOLTAGE POWER


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT11GP60BDQBG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 396
  • Description: POWER MOS 7 IGBT A NEW GENERATION OF HIGH VOLTAGE POWER (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 600V
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 41A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 187W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 16 ns
Test Condition 400V, 11A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 11A
Turn Off Time-Nom (toff) 150 ns
IGBT Type PT
Gate Charge 40nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 7ns/29ns
Switching Energy 46μJ (on), 90μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet