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  • APT1204R7BFLLG

APT1204R7BFLLG

MOSFET N-CH 1200V 3.5A TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT1204R7BFLLG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 326
  • Description: MOSFET N-CH 1200V 3.5A TO-247 (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 1.2kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 3.5A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 135W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 135W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.7 Ω @ 1.75A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.5A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 425 mJ
Max Junction Temperature (Tj) 150°C
Height 25.96mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet