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APT12M80B

MOSFET N-CH 800V 13A TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT12M80B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 136
  • Description: MOSFET N-CH 800V 13A TO-247 (Kg)

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Details

Tags

Parameters
Terminal Position SINGLE
Current Rating 12A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 335W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 335W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 45A
Avalanche Energy Rating (Eas) 525 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
See Relate Datesheet