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APT13003DU-G1

APT13003DU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-APT13003DU-G1
  • Package: TO-225AA, TO-126-3
  • Datasheet: PDF
  • Stock: 598
  • Description: APT13003DU-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Max Power Dissipation 20W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 300mV
Emitter Base Voltage (VEBO) 9V
Continuous Collector Current 1.5A
VCEsat-Max 0.4 V
Turn Off Time-Max (toff) 3350ns
Turn On Time-Max (ton) 700ns
Fall Time-Max (tf) 350ns
RoHS Status ROHS3 Compliant
See Relate Datesheet