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  • APT13003DZTR-G1

APT13003DZTR-G1

APT13003DZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-APT13003DZTR-G1
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 826
  • Description: APT13003DZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92
Operating Temperature -65°C~150°C TJ
Packaging Tape & Box (TB)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 1.1W
Element Configuration Single
Power - Max 1.1W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 400mV @ 250mA, 1A
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 1.5A
Collector Emitter Saturation Voltage 400mV
Max Breakdown Voltage 450V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 9V
Height 4.7mm
Length 4.7mm
Width 3.7mm
RoHS Status ROHS3 Compliant
See Relate Datesheet