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APT13005TF-G1

APT13005TF-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-APT13005TF-G1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 519
  • Description: APT13005TF-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Vce Saturation (Max) @ Ib, Ic 900mV @ 1A, 4A
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 900mV
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 9V
Height 16mm
Length 10.3mm
Width 4.9mm
RoHS Status ROHS3 Compliant
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 28W
Element Configuration Single
Power - Max 28W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
See Relate Datesheet