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APT15GT120BRG

IGBT 1200V 36A 250W TO247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT15GT120BRG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 136
  • Description: IGBT 1200V 36A 250W TO247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 250W
Current Rating 36A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 36A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 21 ns
Test Condition 800V, 15A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Turn Off Time-Nom (toff) 137 ns
IGBT Type NPT
Gate Charge 105nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 10ns/85ns
Switching Energy 585μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet