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APT17F100B

MOSFET N-CH 1000V 17A TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT17F100B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 560
  • Description: MOSFET N-CH 1000V 17A TO-247 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.8Ohm
Pulsed Drain Current-Max (IDM) 68A
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature HIGH RELIABILITY, AVALANCHE RATED
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 17A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 625W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 625W
Case Connection DRAIN
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4845pF @ 25V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 31ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 28 ns
See Relate Datesheet