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APT20GF120BRDQ1G

IGBT 1200V 36A 200W TO247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT20GF120BRDQ1G
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 132
  • Description: IGBT 1200V 36A 200W TO247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 200W
Current Rating 36A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 36A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 19 ns
Test Condition 800V, 15A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Turn Off Time-Nom (toff) 255 ns
IGBT Type NPT
Gate Charge 100nC
Current - Collector Pulsed (Icm) 64A
Td (on/off) @ 25°C 10ns/120ns
Switching Energy 895μJ (on), 840μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet