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APT25GN120SG

Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(2+Tab) D3PAK


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT25GN120SG
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 486
  • Description: Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(2+Tab) D3PAK (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 280 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 67A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 39 ns
Test Condition 800V, 25A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Continuous Collector Current 67A
Turn Off Time-Nom (toff) 560 ns
IGBT Type Trench Field Stop
Gate Charge 155nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 22ns/280ns
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.08mm
Length 16.05mm
Width 13.99mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 25 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 272W
Terminal Form GULL WING
See Relate Datesheet