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APT27HZTR-G1

APT27HZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-APT27HZTR-G1
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 261
  • Description: APT27HZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92
Weight 453.59237mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 800mW
Base Part Number APT27
Polarity NPN
Element Configuration Single
Power - Max 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 300mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 800mA
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 450V
Emitter Base Voltage (VEBO) 9V
Continuous Collector Current 800mA
RoHS Status ROHS3 Compliant
See Relate Datesheet