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APT30GS60KRG

Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT30GS60KRG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 345
  • Description: Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 45 ns
Test Condition 400V, 30A, 9.1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A
Turn Off Time-Nom (toff) 412 ns
IGBT Type NPT
Gate Charge 145nC
Current - Collector Pulsed (Icm) 113A
Td (on/off) @ 25°C 16ns/360ns
Switching Energy 570μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet