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APT30GT60BRDQ2G

Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT30GT60BRDQ2G
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 161
  • Description: Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 250W
Current Rating 64A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 64A
Reverse Recovery Time 22 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 32 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 7.5nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 12ns/225ns
Switching Energy 80μJ (on), 605μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet