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  • APT32F120J

APT32F120J

MOSFET N-CH 1200V 33A SOT-227


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT32F120J
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 157
  • Description: MOSFET N-CH 1200V 33A SOT-227 (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY
Voltage - Rated DC 1.2kV
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 32A
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 100 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 320m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 18200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 560nC @ 10V
Rise Time 60ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 315 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.32Ohm
Drain to Source Breakdown Voltage 1.2kV
Avalanche Energy Rating (Eas) 2700 mJ
Height 9.6mm
Length 38.2mm
Width 25.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Contact Plating Tin
Mount Chassis Mount, Screw
See Relate Datesheet