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APT35GP120B2DQ2G

Trans IGBT Chip N-CH 1.2KV 96A 3-Pin(3+Tab) T-MAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT35GP120B2DQ2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 672
  • Description: Trans IGBT Chip N-CH 1.2KV 96A 3-Pin(3+Tab) T-MAX (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 543W
Current Rating 96A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 96A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 36 ns
Test Condition 600V, 35A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Turn Off Time-Nom (toff) 220 ns
IGBT Type PT
Gate Charge 150nC
Current - Collector Pulsed (Icm) 140A
Td (on/off) @ 25°C 16ns/95ns
Switching Energy 750μJ (on), 680μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet