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APT35GP120JDQ2

IGBT MOD 1200V 64A 284W ISOTOP


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT35GP120JDQ2
  • Package: ISOTOP
  • Datasheet: PDF
  • Stock: 112
  • Description: IGBT MOD 1200V 64A 284W ISOTOP (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS, UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 284W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 64A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 64A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.24nF
Turn On Time 36 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A
Turn Off Time-Nom (toff) 220 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 30V
Input Capacitance (Cies) @ Vce 3.24nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Published 1999
See Relate Datesheet