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APT40GP60B2DQ2G

IGBT 600V 100A 543W TMAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT40GP60B2DQ2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 221
  • Description: IGBT 600V 100A 543W TMAX (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 543W
Current Rating 40A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 543W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
Collector Emitter Breakdown Voltage 600V
Turn On Time 49 ns
Test Condition 400V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 135nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 20ns/64ns
Switching Energy 385μJ (on), 350μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet