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APT40GR120B

Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT40GR120B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 548
  • Description: Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) TO-247 (Kg)

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Means of Payment

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Element Configuration Single
Input Type Standard
Power - Max 500W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 88A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
IGBT Type NPT
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 22ns/163ns
Switching Energy 1.38mJ (on), 906μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet