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  • APT40GR120B2D30

APT40GR120B2D30

Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) T-MAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT40GR120B2D30
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 762
  • Description: Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(3+Tab) T-MAX (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Test Condition 600V, 40A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 40A
Continuous Collector Current 88A
IGBT Type NPT
Gate Charge 210nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 22ns/163ns
Switching Energy 1.38mJ (on), 906μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 500W
Element Configuration Single
Input Type Standard
Turn On Delay Time 22 ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 163 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 88A
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet