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APT44GA60BD30

IGBT 600V 78A 337W TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT44GA60BD30
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 178
  • Description: IGBT 600V 78A 337W TO-247 (Kg)

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 29 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 337W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 337W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 78A
Collector Emitter Breakdown Voltage 600V
Turn On Time 29 ns
Test Condition 400V, 26A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 26A
Turn Off Time-Nom (toff) 208 ns
IGBT Type PT
Gate Charge 128nC
Current - Collector Pulsed (Icm) 130A
Td (on/off) @ 25°C 16ns/84ns
Switching Energy 409μJ (on), 258μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet