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APT45GP120B2DQ2G

IGBT 1200V 113A 625W TMAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT45GP120B2DQ2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 458
  • Description: IGBT 1200V 113A 625W TMAX (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 625W
Current Rating 113A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 113A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.3V
Turn On Time 47 ns
Test Condition 600V, 45A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 45A
Continuous Collector Current 113A
Turn Off Time-Nom (toff) 230 ns
IGBT Type PT
Gate Charge 185nC
Current - Collector Pulsed (Icm) 170A
Td (on/off) @ 25°C 18ns/100ns
Switching Energy 900μJ (on), 905μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet