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APT50GN120B2G

IGBT 1200V 134A 543W TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT50GN120B2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 667
  • Description: IGBT 1200V 134A 543W TO-247 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 543W
Current Rating 134A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 134A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 55 ns
Test Condition 800V, 50A, 2.2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 600 ns
IGBT Type NPT, Trench Field Stop
Gate Charge 315nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 28ns/320ns
Switching Energy 4495μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet