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APT50GP60B2DQ2G

Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) T-MAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT50GP60B2DQ2G
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 948
  • Description: Trans IGBT Chip N-CH 600V 150A 3-Pin(3+Tab) T-MAX (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 625W
Current Rating 150A
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 150A
Collector Emitter Breakdown Voltage 600V
Turn On Time 55 ns
Test Condition 400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 200 ns
IGBT Type PT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 190A
Td (on/off) @ 25°C 19ns/85ns
Switching Energy 465μJ (on), 635μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet