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APT50GT60BRDQ2G

Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT50GT60BRDQ2G
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 939
  • Description: Trans IGBT Chip N-CH 600V 110A 3-Pin(3+Tab) TO-247 (Kg)

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Shipping Cost

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 446W
Current Rating 110A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 110A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 46 ns
Test Condition 400V, 50A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A
Continuous Collector Current 110A
Turn Off Time-Nom (toff) 365 ns
IGBT Type NPT
Gate Charge 240nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 14ns/240ns
Switching Energy 995μJ (on), 1070μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Height 5.31mm
Length 21.46mm
Width 16.26mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet