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  • APT50M65B2FLLG

APT50M65B2FLLG

MOSFET N-CH 500V 67A T-MAX


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT50M65B2FLLG
  • Package: TO-247-3 Variant
  • Datasheet: PDF
  • Stock: 397
  • Description: MOSFET N-CH 500V 67A T-MAX (Kg)

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 33.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7010pF @ 25V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Rise Time 28ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 67A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 268A
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 67A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 694W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection DRAIN
See Relate Datesheet