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APT53F80J

MOSFET N-CH 800V 57A SOT-227


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT53F80J
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 845
  • Description: MOSFET N-CH 800V 57A SOT-227 (Kg)

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Details

Tags

Parameters
Factory Lead Time 33 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 53A
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 100 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 43A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 17550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 570nC @ 10V
Rise Time 145ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 435 ns
Continuous Drain Current (ID) 57A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 325A
Avalanche Energy Rating (Eas) 3725 mJ
Height 9.6mm
Length 38.2mm
Width 25.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet