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  • APT68GA60LD40

APT68GA60LD40

Trans IGBT Chip N-CH 600V 121A 3-Pin(3+Tab) TO-264


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT68GA60LD40
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 153
  • Description: Trans IGBT Chip N-CH 600V 121A 3-Pin(3+Tab) TO-264 (Kg)

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 25 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 520W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 520W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 121A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 46 ns
Test Condition 400V, 40A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 304 ns
IGBT Type PT
Gate Charge 198nC
Current - Collector Pulsed (Icm) 202A
Td (on/off) @ 25°C 21ns/133ns
Switching Energy 715μJ (on), 607μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet