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APT80GA60B

Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT80GA60B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 309
  • Description: Trans IGBT Chip N-CH 600V 143A 3-Pin(3+Tab) TO-247 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 23ns/158ns
Switching Energy 840μJ (on), 751μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6V
Height 21.46mm
Length 16.26mm
Width 5.31mm
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 33 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 143A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 52 ns
Test Condition 400V, 47A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 47A
Continuous Collector Current 143A
Turn Off Time-Nom (toff) 326 ns
IGBT Type PT
Gate Charge 230nC
See Relate Datesheet