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APT80M60J

MOSFET N-CH 600V 84A SOT-227


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT80M60J
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 427
  • Description: MOSFET N-CH 600V 84A SOT-227 (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 19 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 8™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 80A
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 960W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 135 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 24000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 84A Tc
Gate Charge (Qg) (Max) @ Vgs 600nC @ 10V
Rise Time 155ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 410 ns
Continuous Drain Current (ID) 84A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.06Ohm
Avalanche Energy Rating (Eas) 3350 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet