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  • APT8M100B

APT8M100B

Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APT8M100B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 872
  • Description: Trans MOSFET N-CH 1KV 8A 3-Pin(3+Tab) TO-247 (Kg)

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Details

Tags

Parameters
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature FAST SWITCHING, AVALANCHE RATED
Subcategory FET General Purpose Powers
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 8A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Power Dissipation-Max 290W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 290W
Case Connection DRAIN
Turn On Delay Time 8.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.8 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1885pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 7.8ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7.2 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 7.3A
Pulsed Drain Current-Max (IDM) 27A
Height 5.31mm
Length 21.46mm
Width 16.26mm
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet