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APTGF100A120T3WG

IGBT MODULE 1200V 130A 657W SP3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF100A120T3WG
  • Package: SP3
  • Datasheet: -
  • Stock: 599
  • Description: IGBT MODULE 1200V 130A 657W SP3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 18
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 657W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X9
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 130A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6.5nF
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 100A
Turn Off Time-Nom (toff) 390 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.5nF @ 25V
VCEsat-Max 3.7 V
RoHS Status RoHS Compliant
See Relate Datesheet