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  • APTGF200A120D3G

APTGF200A120D3G

Trans IGBT Module N-CH 1.2KV 300A 11-Pin Case D-3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF200A120D3G
  • Package: D-3 Module
  • Datasheet: -
  • Stock: 456
  • Description: Trans IGBT Module N-CH 1.2KV 300A 11-Pin Case D-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 11
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.4kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1400W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 300A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 13nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 590 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13nF @ 25V
VCEsat-Max 3.7 V
RoHS Status RoHS Compliant
See Relate Datesheet