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APTGF50DH60T1G

IGBT MODULE 600V 65A 250W SP1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF50DH60T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 961
  • Description: IGBT MODULE 600V 65A 250W SP1 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 50A
Turn Off Time-Nom (toff) 151 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.2nF @ 25V
VCEsat-Max 2.45 V
Height 11.5mm
Length 51.6mm
Width 40.8mm
RoHS Status RoHS Compliant
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X9
Qualification Status Not Qualified
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 65A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 2.2nF
Turn On Time 52 ns
See Relate Datesheet