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APTGF75DA120T1G

Trans IGBT Module N-CH 1.2KV 100A 12-Pin Case SP-1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGF75DA120T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 752
  • Description: Trans IGBT Module N-CH 1.2KV 100A 12-Pin Case SP-1 (Kg)

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Details

Tags

Parameters
Input Capacitance (Cies) @ Vce 5.1nF @ 25V
Terminal Form THROUGH-HOLE
RoHS Status RoHS Compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 500W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.7V
Max Collector Current 100A
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Current - Collector Cutoff (Max) 250μA
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Collector Emitter Breakdown Voltage 1.2kV
Published 2012
JESD-609 Code e1
Voltage - Collector Emitter Breakdown (Max) 1200V
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance 5.1nF
Number of Terminations 12
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 75A
ECCN Code EAR99
Turn Off Time-Nom (toff) 390 ns
Terminal Finish TIN SILVER COPPER
IGBT Type NPT
Subcategory Insulated Gate BIP Transistors
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Max Power Dissipation 500W
Terminal Position UPPER
See Relate Datesheet