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APTGL180A120T3AG

IGBT MODULE 1200V 230A 940W SP3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGL180A120T3AG
  • Package: SP3
  • Datasheet: -
  • Stock: 627
  • Description: IGBT MODULE 1200V 230A 940W SP3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 9.3nF
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 150A
Turn Off Time-Nom (toff) 430 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
VCEsat-Max 2.2 V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 20
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 940W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 940W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 230A
See Relate Datesheet