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APTGT100DDA60T3G

Trans IGBT Module N-CH 600V 150A 32-Pin Case SP-3


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT100DDA60T3G
  • Package: SP3
  • Datasheet: PDF
  • Stock: 188
  • Description: Trans IGBT Module N-CH 600V 150A 32-Pin Case SP-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 340W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Qualification Status Not Qualified
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 340W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 150A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 6.1nF
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 100A
Turn Off Time-Nom (toff) 370 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.1nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet