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APTGT100H170G

IGBT MODULE 1700V 150A 560W SP6


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT100H170G
  • Package: SP6
  • Datasheet: PDF
  • Stock: 959
  • Description: IGBT MODULE 1700V 150A 560W SP6 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 12
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 560W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 560W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 9nF
Turn On Time 450 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 100A
Turn Off Time-Nom (toff) 1100 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 9nF @ 25V
VCEsat-Max 2.4 V
RoHS Status RoHS Compliant
See Relate Datesheet