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APTGT200A120G

POWER MODULE IGBT 1200V 200A SP6


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT200A120G
  • Package: SP6
  • Datasheet: PDF
  • Stock: 864
  • Description: POWER MODULE IGBT 1200V 200A SP6 (Kg)

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 890W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 890W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 280A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 14nF
Turn On Time 340 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 200A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet