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  • APTGT30A170T1G

APTGT30A170T1G

Trans IGBT Module N-CH 1.7KV 45A 12-Pin Case SP-1


  • Manufacturer: Microsemi Corporation
  • Origchip NO: 523-APTGT30A170T1G
  • Package: SP1
  • Datasheet: PDF
  • Stock: 800
  • Description: Trans IGBT Module N-CH 1.7KV 45A 12-Pin Case SP-1 (Kg)

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Details

Tags

Parameters
Input Standard
Collector Emitter Voltage (VCEO) 2.4V
Max Collector Current 45A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 2.5nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Turn Off Time-Nom (toff) 850 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
RoHS Status RoHS Compliant
Factory Lead Time 36 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 210W
Terminal Position UPPER
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 210W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
See Relate Datesheet